參數(shù)資料
型號(hào)： IRFP350
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： N-CHANNEL POWER MOSFETS
中文描述： N溝道功率MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 333K
代理商： IRFP350
IRFP350LC
HEXFET
Power MOSFET
PD - 9.1229
Revision 0
V
DSS
= 400V
R
DS(on)
= 0.30
I
D
= 16A
Parameter
Max.
16
9.9
64
190
1.5
±30
390
16
19
4.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Thermal Resistance
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
Absolute Maximum Ratings
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.65
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
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相關(guān)PDF資料
PDF描述
IRFP350 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
IRFP350 Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)
IRFP360 Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
IRFP360 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
IRFP360LC Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP350A 功能描述:MOSFET 400V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP350FI 功能描述:MOSFET REORDER 620-IRFP350 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP350LC 功能描述:MOSFET N-Chan 400V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP350LCPBF 功能描述:MOSFET N-Chan 400V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP350LCPBF 制造商:International Rectifier 功能描述:MOSFET
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