參數(shù)資料
型號(hào): IRFP32N50
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 500V及的Rds(on)典型.\u003d 0.135ohm,身份證\u003d 32A條)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 94K
代理商: IRFP32N50
IRFP32N50K
05/24/01
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
500V
R
DS(on)
typ.
0.135
I
D
32A
Parameter
Max.
32
20
130
460
3.7
± 30
13
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°
C
10lb*in (1.1N*m)
Absolute Maximum Ratings
TO-247AC
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
450
32
46
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
Avalanche Characteristics
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Low R
DS(on)
Applications
PD - 94099A
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