參數(shù)資料
型號: IRFP264N
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 250V,的Rds(on)\u003d 60mohm,身份證\u003d 44A條)
文件頁數(shù): 4/8頁
文件大?。?/td> 222K
代理商: IRFP264N
IRFP264N
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
I =
SEE FIGURE
FOR TEST CIRCUIT
13
25A
V
= 50V
DS
V
= 125V
DS
V
= 200V
DS
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 175 C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
相關PDF資料
PDF描述
IRFP264 Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A)
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IRFP32N50K Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
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