參數(shù)資料
型號： IRFP150
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
中文描述： 40 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/7頁
文件大?。?/td> 71K
代理商： IRFP150
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP150
100
100
40
26
160
±
20
180
1.44
150
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
V
GS
= 10V, I
D
= 22A (Figures 8, 9)
V
DS
≥
20V, I
D
= 20A (Figure 12)
V
DD
= 50V, I
D
= 40A, R
GS
= 6.8
, R
L
= 1.2
MOSFET Switching Times are Essentially
Independent of Operating Temperature
100
-
-
V
Gate to Threshold Voltage
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g(TOT)
40
-
-
A
Gate to Source Leakage
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.045
0.055
Forward Transconductance (Note 2)
13
20
-
S
Turn-On Delay Time
-
15
24
ns
Rise Time
-
140
210
ns
Turn-Off Delay Time
-
60
89
ns
Fall Time
-
90
140
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 40A, V
DS
= 0.8 x Rated BV
DSS
.
I
g(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-
70
110
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
20
-
nC
Gate to Drain “Miller” Charge
-
30
-
nC
Input Capacitance
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
2000
-
pF
Output Capacitance
-
1000
-
pF
Reverse-Transfer Capacitance
-
350
-
pF
Internal Drain Inductance
MeasuredfromtheDrain
Lead, 6mm (0.25in) from
the Package to the
Center of the Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 6mm
(0.25in) from the Header
to the Source Bonding
Pad
-
12.5
-
nH
Junction to Case
R
θ
JC
R
θ
JA
-
-
0.70
o
C/W
o
C/W
Junction to Ambient
Free Air Operation
-
-
30
L
S
L
D
G
D
S
IRFP150
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