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參數(shù)資料
| 型號(hào)： | IRF9232 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 5.5 A, 200 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 72K |
| 代理商： | IRF9232 |
6-5
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
-3
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-10
-6
-9
I
D
,
-12
-8
-15
V
GS
= -10V
V
GS
= -9V
V
GS
= -8V
80
μ
sPULSE TEST
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
-15
-12
-9
-6
-3
0
0
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
80
μ
s PULSE TEST
V
DS
≥
I
D(ON)
x r
DS(ON)
MAX
I
D
,
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
1.2
-5
-10
-15
-20
D
)
I
D
, DRAIN CURRENT (A)
-25
1.6
0
0.4
0.8
V
GS
= -20V
2.0
μ
s PULSE TEST
2.0
V
GS
= -10V
N
2.5
1.5
1.0
0.5
0
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
120
2.0
80
V
GS
= -10V, I
D
= -2.0A
160
O
1.25
0.95
0.85
0.75
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
N
B
80
120
160
1.05
1.15
I
D
= 250
μ
A
2000
400
00
-20
-50
C
1200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1600
800
C
ISS
C
OSS
C
RSS
-10
-30
-40
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
IRF9230, IRF9231, IRF9232, IRF9233
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|---|---|
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