參數(shù)資料
型號(hào): IRF9232
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
中文描述: 5.5 A, 200 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 72K
代理商: IRF9232
6-4
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
T
A
, CASE TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
-10
-8
-6
-4
-2
IRF9230, IRF9231
IRF9232, IRF9233
10
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
o
C
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
-1
1
SINGLE PULSE
0.1
0.05
0.02
0.01
0.2
0.5
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
I
D
,
-100
-100
-1
-10
-1
-0.1
-1000
10
μ
s
100
μ
s
1ms
10ms
100ms
DC
T
J
= MAX RATED
T
C
= 25
o
C
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
IRF9230, 1
IRF9230, 1
IRF9232, 3
IRF9232, 3
IRF9231, 3
IRF9230, 2
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-3
-6
-9
-12
-15
-50
0
V
GS =
-4V
V
GS =
-6V
V
GS =
-7V
V
GS =
-9V
V
GS =
-8V
V
GS =
-10V
80
μ
s PULSE TEST
V
GS =
-5V
IRF9230, IRF9231, IRF9232, IRF9233
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