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參數(shù)資料
| 型號： | IRF9232 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 5.5 A, 200 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 72K |
| 代理商： | IRF9232 |
6-3
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
550
-
pF
Output Capacitance
C
OSS
-
170
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Internal Drain Inductance
L
D
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.67
o
C/W
Thermal Resistance
Junction to Ambient
R
θ
JA
Typical Socket Mount
-
-
60
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
-6.5
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-26
A
Source to Drain Diode Voltage
(Note 2)
V
SD
T
C
= 25
o
C, I
SD
= -6.5A, V
GS
= 0V,
(Figure 13)
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/
μ
s
-
400
-
ns
Reverse Recovery Charge
Q
RR
-
2.6
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 17.75mH, R
G
= 25
,
peak I
AS
= 6.5A (Figures 15, 16).
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
IRF9230, IRF9231, IRF9232, IRF9233
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