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參數(shù)資料
| 型號： | IRF830ASTRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 5A條（?。﹟對263AB |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 190K |
| 代理商： | IRF830ASTRR |
IRF830AS/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
24
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
I =
FOR TEST CIRCUIT
SEE FIGURE
13
5.0A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
0.1
1
10
100
10
100
1000
10000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
1
10
100
1000
10000
1
10
100
1000
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
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