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參數(shù)資料
| 型號： | IRF7YSZ44VCM |
| 英文描述： | 60V Single N-Channel Hi-Rel MOSFET in a Low Ohmic TO-257AA package |
| 中文描述： | 60V的單個N -溝道高可靠性的低電阻MOSFET以- 257AA封裝 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | IRF7YSZ44VCM |
IRF7Y1405CM
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
55
—
Typ
—
0.057
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.0153
VGS = 10V, ID = 18A
2.0
36
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 250
μ
A
VDS =15V, IDS = 18A
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ=125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 18A
VDS = 44V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
200
40
80
20
90
250
150
— nH
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
—
VGS = 0V, VDS = 25V
—
pF
—
nC
VDD = 28V, ID = 18A,
VGS = 10V, RG = 2.5
l Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5080
1300
300
f = 1.0MHz
nA
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.25
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min Typ
—
—
—
—
—
Max Units
18*
72
1.3
100
350
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 18A, VGS = 0V
Tj = 25°C, IF = 18A, di/dt
≤
100A/
μ
s
VDD
≤
25V
A
* Current is limited by package
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