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參數(shù)資料
| 型號(hào)： | IRF7F3704 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 12A I(D) | TO-205AF |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 12A條（丁）|至205AF |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | IRF7F3704 |
IRF7F3704
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
20
—
Typ
—
0.024
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
1.0
15
—
—
—
—
—
—
—
—
0.05
0.055
3.0
—
20
100
VGS = 10V, ID = 10.6A
VGS = 4.5V, ID = 10.6A
VDS = VGS, ID = 250
μ
A
VDS =10V, IDS = 10.6A
VDS = 20V ,VGS=0V
VDS = 16V,
VGS = 0V, TJ =125°C
VGS =-20V
VGS = -20V
VGS =4.5V, ID = 12A
VDS = 10V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
22
10
5.0
14
255
6.0
15
—
0.25in. from package) to source
lead (6mm/0.25in. from package)
—
VGS = 0V, VDS = 10V
—
pF
—
nC
VDD = 10V, ID = 12A,
VGS = 4.5V, RG = 1.8
Measured from drain lead (6mm/
l
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1860
990
55
f = 1.0MHz
nA
nH
ns
μ
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
12*
48
1.4
50
60
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
16V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
6.25
175
Typical socket mount
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