參數(shù)資料
型號: IRF7832
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 10/10頁
文件大?。?/td> 211K
代理商: IRF7832
10
www.irf.com
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 2.0mH, R
G
= 25
, I
AS
= 16A.
Pulse width
400μs; duty cycle
2%.
When mounted on 1 inch square copper board.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
01/04
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
相關(guān)PDF資料
PDF描述
IRF7103QPBF AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET
IRF7103Q Power MOSFET(Vdss=50V)
IRF7103QTR TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
IRF7103 Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)
IRF7104 HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7832HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 20A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 20A 8SOIC - Rail/Tube
IRF7832PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 4mOhms 34nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7832TR 功能描述:MOSFET N-CH 30V 20A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF7832TRPBF 功能描述:MOSFET MOSFT 30V 20A 4mOhm 34nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7832TRPBF-CUT TAPE 制造商:IR 功能描述:Single N-Channel 30 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8