參數(shù)資料
型號: IRF520
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Power MOSFETs, 11 A, 60-100 V
中文描述: 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/10頁
文件大?。?/td> 185K
代理商: IRF520
IRF520NS/L
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
500
600
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
5
Q , Total Gate Charge (nC)
10
15
20
25
V
G
V = 80V
V = 50V
V = 20V
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 5.7A
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
T = 25°C
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
S
A
T = 175°C
0.1
1
10
100
1
10
100
1000
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
相關(guān)PDF資料
PDF描述
IRF520 N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs
IRF520N Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
IRF520PBF HEXFET Power MOSFET
IRF520VPBF HEXFET㈢ Power MOSFET
IRF520V Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
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IRF520A 功能描述:MOSFET 9.2A 100V .4 OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF520CHIP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP
IRF520FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
IRF520L 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)