參數(shù)資料
型號(hào): IRF520V
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 100V的,的Rds(on)\u003d 0.165ohm,身份證\u003d 9.6A)
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 200K
代理商: IRF520V
IRF520V
HEXFET
Power MOSFET
3/30/01
Parameter
Typ.
–––
0.50
–––
Max.
3.4
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 100V
R
DS(on)
= 0.165
I
D
= 9.6A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Optimized for SMPS Applications
Description
PD - 94092
Absolute Maximum Ratings
Parameter
Max.
9.6
6.8
37
44
0.29
± 20
9.2
4.4
7.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
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