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參數(shù)資料
| 型號(hào)： | IRF3007LPBF |
| 元件分類： | JFETs |
| 英文描述： | 62 A, 75 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | LEAD FREE, PLASTIC, TO-262, 3 PIN |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 323K |
| 代理商： | IRF3007LPBF |
IRF3007S/LPbF
www.irf.com
7
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2
DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 50% Duty Cycle
ID = 48A
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
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| IRF3007PBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IRF3007SPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3007STRLPBF | 制造商:International Rectifier 功能描述:75V D2PAK - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 75V 62A TO220AB 制造商:International Rectifier 功能描述:MOSFET 75V D2PAK |
| IRF3103 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:HEXFET㈢ Power MOSFET |
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