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參數(shù)資料
| 型號： | IRF3007LPBF |
| 元件分類： | JFETs |
| 英文描述： | 62 A, 75 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | LEAD FREE, PLASTIC, TO-262, 3 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 323K |
| 代理商： | IRF3007LPBF |
HEXFET Power MOSFET
This design of HEXFET Power MOSFETs utilizes
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
S
D
G
VDSS = 75V
RDS(on) = 0.0126
ID = 62A
Description
07/23/10
www.irf.com
1
IRF3007SPbF
IRF3007LPbF
TO-262
IRF3007LPbF
D2Pak
IRF3007SPbF
** This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
62
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
44
A
IDM
Pulsed Drain Current
320
PD @TC = 25°C
Power Dissipation
120
W
Linear Derating Factor
0.8
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
290
mJ
EAS (6 sigma)
Single Pulse Avalanche Energy Tested Value
946
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.25
°C/W
RθJA
Junction-to-Ambient (PCB Mounted,steady state)**
–––
62
Thermal Resistance
Typical Applications
l
Industrial Motor Drive
Features
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
PD - 95494A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF3007PBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3007S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF3007SPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3007STRLPBF | 制造商:International Rectifier 功能描述:75V D2PAK - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 75V 62A TO220AB 制造商:International Rectifier 功能描述:MOSFET 75V D2PAK |
| IRF3103 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:HEXFET㈢ Power MOSFET |
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