參數資料
型號： IRF1010ES
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份證\u003d 84A條）
文件頁數： 2/10頁
文件大?。?/td> 123K
代理商： IRF1010ES
IRF1010ES/IRF1010EL
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 50A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 50A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
73
220
1.3
110
330
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
84
330
A
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25
°
C, L = 260μH
R
G
= 25
, I
AS
= 50A, V
GS
=10V
(See Figure 12)
I
SD
≤
50A, di/dt
≤
230A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Pulse width
≤
400μs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175
°
C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter
Min. Typ. Max. Units
60
–––
–––
0.064
–––
–––
–––
2.0
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
78
–––
48
–––
53
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 50A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 50A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 50A
R
G
= 3.6
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 50A, L = 260μH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
m
V
S
12
4.0
–––
25
250
100
-100
130
28
44
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
1180
3210
–––
690
140
–––
–––
320
pF
mJ
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
相關PDF資料
PDF描述
IRF1010NL Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
IRF1010NS Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
IRF1010EPBF HEXFET㈢ Power MOSFET
IRF1010E Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
IRF1010N Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
相關代理商/技術參數
參數描述
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