參數(shù)資料
型號(hào)： IRF1010EPBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 242K
代理商： IRF1010EPBF
IRF1010EPbF
HEXFET
Power MOSFET
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 60V
R
DS(on)
= 12m
I
D
= 84A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
84
59
330
200
1.4
± 20
50
17
4.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
PD - 94965A
相關(guān)PDF資料
PDF描述
IRF1010E Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
IRF1010N Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
IRF1010ZLPBF Replacement for Texas Instruments part number 54BCT648/B3A. Buy from authorized manufacturer Rochester Electronics.
IRF1010ZPBF Replacement for Texas Instruments part number 54BCT648/BKA. Buy from authorized manufacturer Rochester Electronics.
IRF1010ZSPBF Replacement for Texas Instruments part number 54BCT648/BLA. Buy from authorized manufacturer Rochester Electronics.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1010ES 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
IRF1010ESL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IRF1010ESPBF 制造商:International Rectifier 功能描述:MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 84A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 60V 84A D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET N-Channel 60V 84A D2PAK
IRF1010ESTRL 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 84A, D2-PAK, Transistor Polarity:N Channel, Continuous Dr
IRF1010ESTRLPBF 功能描述:MOSFET MOSFT 60V 83A 12mOhm 86.6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*