參數資料
型號： IRF1010ES
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份證\u003d 84A條）
文件頁數： 1/10頁
文件大?。?/td> 123K
代理商： IRF1010ES
HEXFET
Power MOSFET
02/14/02
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Thermal Resistance
www.irf.com
1
V
DSS
= 60V
R
DS(on)
= 12m
I
D
= 84A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Absolute Maximum Ratings
Description
Parameter
Max.
84
59
330
200
1.4
± 20
50
17
4.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/
°
C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N
m)
°
C
IRF1010ES
IRF1010EL
D
2
Pak
IRF1010ES
TO-262
IRF1010EL
Advanced Process Technology
Surface Mount (IRF1010ES)
Low-profile through-hole (IRF1010EL)
175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
°
C/W
PD - 91720
相關PDF資料
PDF描述
IRF1010NL Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
IRF1010NS Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
IRF1010EPBF HEXFET㈢ Power MOSFET
IRF1010E Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
IRF1010N Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
相關代理商/技術參數
參數描述
IRF1010ESL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IRF1010ESPBF 制造商:International Rectifier 功能描述:MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 84A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 60V 84A D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET N-Channel 60V 84A D2PAK
IRF1010ESTRL 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 84A, D2-PAK, Transistor Polarity:N Channel, Continuous Dr
IRF1010ESTRLPBF 功能描述:MOSFET MOSFT 60V 83A 12mOhm 86.6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1010ESTRR 功能描述:MOSFET N-CH 60V 84A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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