參數(shù)資料
型號： IR2214SS
廠商： International Rectifier
英文描述： HALF-BRIDGE GATE DRIVER IC
中文描述： 半橋柵極驅(qū)動IC
文件頁數(shù)： 21/28頁
文件大?。?/td> 308K
代理商： IR2214SS
21
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
Sizing tips
Bootstrap supply
The V
voltage provides the supply to the high
side driver circuitry of the IR2214. This supply
sits on top of the V
S
voltage and so it must be
floating.
The bootstrap method to generate V
supply
can be used with IR2214. The bootstrap supply
is formed by a diode and a capacitor connected
as in figure 19.
Figure 19:
bootstrap supply schematic
This method has the advantage of being simple
and low cost but may force some limitations on
duty-cycle and on-time since they are limited by
the requirement to refresh the charge in the boot-
strap capacitor.
Proper capacitor choice can reduce drastically
these limitations.
Bootstrap capacitor sizing
To size the bootstrap capacitor, the first step is
to establish the minimum voltage drop (
V
)
that we have to guarantee when the high side
IGBT is on.
bootstrap
diode
I
bootstrap
capacitor
VB
VS
VCC
HOP
HON
SSDH
DC+
bootstrap
resistor
COM
V
CC
V
BS
V
F
V
GE
V
CEon
V
FP
I
LOAD
motor
R
boot
If
V
is the minimum gate emitter voltage we
want to maintain, the voltage drop must be:
under the condition:
where
V
is the IC voltage supply,
V
is boot-
strap diode forward voltage,
V
is emitter-col-
lector voltage of low side IGBT and
V
is the
high-side supply undervoltage negative going
threshold.
Now we must consider the influencing factors
contributing V
BS
to decrease:
- IGBT turn on required Gate charge (
Q
G
);
- IGBT gate-source leakage current (
I
LK_GE
);
- Floating section quiescent current (
I
QBS
);
- Floating section leakage current (
I
LK
)
- Bootstrap diode leakage current (
I
LK_DIODE
);
- Desat diode bias when on (
I
)
- Charge required by the internal level shifters
(
Q
); typical 20nC
- Bootstrap capacitor leakage current (
I
LK_CAP
);
- High side on time (
T
HON
).
I
is only relevant when using an electrolytic
capacitor and can be ignored if other types of
capacitors are used. It is strongly recommend
using at least one low ESR ceramic capacitor
(paralleling electrolytic and low ESR ceramic
may result in an efficient solution).
Then we have:
CEon
V
GE
F
CC
BS
V
V
V
V
≤
min
>
BSUV
GE
V
V
min
+
+
+
+
=
QBS
I
GE
LK
LS
G
TOT
I
I
I
I
Q
Q
Q
+
_
(
HON
T
DS
CAP
LK
DIODE
LK
LK
I
+
+
+
)
_
_
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