參數(shù)資料
型號: IR2214SS
廠商: International Rectifier
英文描述: HALF-BRIDGE GATE DRIVER IC
中文描述: 半橋柵極驅(qū)動IC
文件頁數(shù): 15/28頁
文件大小: 308K
代理商: IR2214SS
15
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
The undervoltage on the V
works disabling only
the floating driver. Undervoltage on V
does not
prevent the low side driver to activate its output
nor generate diagnostic signals. V
undervoltage
condition (V
< UV
) latches the high side
output stage in the low state. V
must be
reestablished higher than UV
to return in
normal operating mode. To turn on the floating
driver H
must be re-asserted high (rising edge
event on H
IN
is required).
4.2 Power devices desaturation
Different causes can generate a power inverter
failure: phase and/or rail supply short-circuit,
overload conditions induced by the load, etc…
In all these fault conditions a large current
increase is produced in the IGBT.
The IR2214 fault detection circuit monitors the
IGBT emitter to collector voltage (V
CE
) by means
of an external high voltage diode. High current in
the IGBT may cause the transistor to desaturate,
i.e. V
to increase.
Once in desaturation, the current in power
transistor can be as high as 10 times the nominal
current. Whenever the transistor is switched off,
this high current generates relevant voltage
transients in the power stage that need to be
smoothed out in order to avoid destruction (by
over-voltages). The IR2214 gate driver accomplish
the transients control by smoothly turning off the
desaturated transistor by means of the SSD pin
activating a so called
Soft ShutDown
sequence
(SSD).
4.2.1 Desaturation detection: DSH/L function
Figure 13 shows the structure of the desaturation
sensing and soft shutdown block. This configu-
ration is the same for both high and low side
output stages.
Figure 13:
high and low side output stage
BL
Blt
VB/Vcc
HON/LON
DSH/L
VS/COM
R
HOP/LOP
Ontss
V
DESAT
(t
on
1)
ONE
SHOT
DS
ft
SSDH/L
R
P
P
r
r
e
e
D
D
r
r
i
i
v
v
e
e
r
r
sensing
diode
on/off
DesatHS/LS
desat
comparator
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