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參數(shù)資料
| 型號： | IPB25N06S3-25 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢-T Power-Transistor |
| 中文描述： | ㈢的OptiMOS - T的功率晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 167K |
| 代理商： | IPB25N06S3-25 |
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
1862
-
pF
Output capacitance
C
oss
-
283
-
Reverse transfer capacitance
C
rss
-
270
-
Turn-on delay time
t
d(on)
-
15
-
ns
Rise time
t
r
-
27
-
Turn-off delay time
t
d(off)
-
16
-
Fall time
t
f
-
27
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
14
-
nC
Gate to drain charge
Q
gd
-
6
-
Gate charge total
Q
g
-
27
41
Gate plateau voltage
V
plateau
-
7.0
-
V
Reverse Diode
2)
Diode continous forward current
I
S
-
-
25
A
Diode pulse current
I
S,pulse
-
-
100
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=25 A,
T
j
=25 °C
0.6
0.9
1.3
V
Reverse recovery time
t
rr
V
R
=27.5 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
-
38
ns
Reverse recovery charge
Q
rr
V
R
=27.5 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
-
30
nC
2)
Defined by design. Not subject to production test.
3)
See diagrams 12 and 13.
4)
Qualified at -5V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an
R
thJC
= 3.3 K/W the chip is able to carry 30 A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=27.5 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=14.8
V
DD
=11 V,
I
D
=25 A,
V
GS
=0 to 10 V
Rev. 1.0
page 3
2006-04-03
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPB25N06S3-25_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS-T2 Power-Transistor |
| IPB25N06S325XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 25A 3-Pin(2+Tab) TO-263 |
| IPB25N06S3L-22 | 功能描述:MOSFET OptiMOS-T2 PWR TRANS 55V 25A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPB25N06S3L-22_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS-T2 Power-Transistor |
| IPB25N06S3L22XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 25A 3-Pin(2+Tab) TO-263 |
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