參數(shù)資料
型號(hào)： IPB100N06S3L-03
廠商： INFINEON TECHNOLOGIES AG
英文描述： OptiMOS㈢-T Power-Transistor
中文描述： ㈢的OptiMOS - T的功率晶體管
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 165K
代理商： IPB100N06S3L-03
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
26240
-
pF
Output capacitance
C
oss
-
3290
-
Reverse transfer capacitance
C
rss
-
3140
-
Turn-on delay time
t
d(on)
-
39
-
ns
Rise time
t
r
-
70
-
Turn-off delay time
t
d(off)
-
110
-
Fall time
t
f
-
77
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
99
-
nC
Gate to drain charge
Q
gd
-
68
-
Gate charge total
Q
g
-
368
550
Gate plateau voltage
V
plateau
-
3.5
-
V
Reverse Diode
Diode continous forward current
2)
I
S
-
-
100
A
Diode pulse current
2)
I
S,pulse
-
-
400
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
0.6
0.9
1.3
V
Reverse recovery time
2)
t
rr
V
R
=27.5 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
-
62
-
ns
Reverse recovery charge
2)
Q
rr
-
88
-
nC
1)
Current is limited by bondwire; with an
R
thJC
= 0.5 K/W the chip is able to carry 234 A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=27.5 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=1.3
V
DD
=11 V,
I
D
=80 A,
V
GS
=0 to 10 V
2)
Defined by design. Not subject to production test.
3)
See diagrams 12 and 13.
4)
Qualified at -5V and +16V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2005-09-16
相關(guān)PDF資料
PDF描述
IPI100N06S3L-03 OptiMOS㈢-T Power-Transistor
IPB100N08S2-07 OptiMOS㈢ Power-Transistor
IPI100N08S2-07 OptiMOS㈢ Power-Transistor
IPB100N08S2L-07 OptiMOS㈢ Power-Transistor
IPB12CN10NG OptiMOS㈢2 Power-Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IPB100N06S3L-03_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS-T2 Power-Transistor
IPB100N06S3L03XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) TO-263
IPB100N06S3L-04 功能描述:MOSFET OptiMOS -T2 PWR TRAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPB100N06S3L04ATMA1 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 55V 100A TO-263
IPB100N06S3L04XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:TRANS MOSFET N-CH 55V 100A 3PIN TO-263 - Cut TR (SOS) 制造商:Infineon Technologies 功能描述:TRANSISTORS MOSFET N-CH 55V 100A 3PIN TO-263
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*