參數(shù)資料
型號(hào)： INA-32063-BLK
英文描述： IC-WIDEBAND RF AMPLIFIER
中文描述： 集成電路寬帶射頻放大器
文件頁(yè)數(shù)： 6/11頁(yè)
文件大?。?/td> 89K
代理商： INA-32063-BLK
6
Figure 14 shows an assembled
50
amplifier. The +3 volt supply
is fed directly into the V
d
pin of
the INA-31063 and into the RF
Output pin through the RF choke
(RFC). Capacitor C3 provides RF
bypassing for both the V
d
pin and
the power supply end of the RFC.
Capacitor C4 is optional and may
be used to add additional
bypassing for the V
d
line. A well-
bypassed V
d
line is especially
necessary in cascades of ampli-
fier stages to prevent oscillation
that may occur as a result of RF
feedback through the power
supply lines.
900 MHz 50
Matched
Example
The use of a simple impedance
matching network will typically
increase both gain and output
power by 1.5 dB and 1.5 dBm,
respectively. The values that were
chosen for the two tuning ele-
ments were a 12 nF series induc-
tor and a 1.0 pF shunt capacitor.
The RF choke was a 56 nH
(Coilcraft 1008CS-221, TOKO
LL2012-F or equivalent). The two
blocking capacitors were 100 pF
and the bypass capacitor was
1000 pF.
RF
Output
RF
Input
V
d
C
bypass
C
out
C
block
C
shunt
3
RFC
RFM
Figure 15. Impedance Matched
Output Amplifier Circuit.
These values provide excellent
amplifier performance at 900 MHz.
Larger values for the choke and
capacitors can be used to extend
the lower end of the bandwidth. A
convenient method for making RF
connection to the demonstration
board is to use a PCB mounting
type of SMA connector (Johnson
142-0701881, or equivalent). These
connectors can be slipped over
the edge of the PCB and the
center conductor soldered to the
input and output lines. The ground
pins of the connectors can be
soldered to the ground plane on
the backside of board.
Frequency RFC
400 MHz 120 nH
900 MHz
1900 MHz
2400 MHz
RFM
27 nH
12 nH
4.7 nH None
1.8 nH None
C
SHUNT
2.7 pF
1.0 pF
56 nH
33 nH
27 nH
Figure 16. Suggested Matching
E lements for Common Frequency
Bands.
The test results for the INA-31063
were measured on the 50
input
and output impedance matched
amplifier described above.
P
o
(
P
in
(dBm)
-16
4
-8
-12
-30
-20
-25
-10
-15
-5
0
0
-4
900 MHz
1900 MHz
Figure 17. Measured Input Power vs.
Output Power on Assembled 50
Amplifier at 900 MHz and 1900 MHz.
An important specification when
selecting a LO buffer amplifier is
reverse isolation under P
1dB
input
conditions. Figure 18 shows the
measured reverse isolation with
-10 dBm applied to the input of
the device.
-60
-20
-40
-30
-50
0
1.0
0.5
1.5
2.0
2.5
R
(
FREQUENCY (GHz)
Figure 18. Measured Isolation.
C2
RFC
C1
Ctune
Ltune
C3
C4
V
d
INA-3XX63 DEMO BOARD
3
Figure 14. Assembled Amplifier.
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