參數(shù)資料
型號： INA-32063-BLK
英文描述： IC-WIDEBAND RF AMPLIFIER
中文描述： 集成電路寬帶射頻放大器
文件頁數(shù)： 3/11頁
文件大?。?/td> 89K
代理商： INA-32063-BLK
3
INA-31063 Typical Performance,
T
C
= 25
°
C, Z
O
= 50
, V
d
= 3 V
0
20
10
15
5
0
1.0
0.5
1.5
2.0
2.5
G
(
FREQUENCY (GHz)
Figure 1. Gain vs. Frequency and
Voltage measured in a 50
system.
N
(
FREQUENCY (GHz)
Figure 2. Noise Figure vs. Frequency
and Voltage.
P
1
(
FREQUENCY (GHz)
Figure 3. Output Power for 1 dB Gain
Compression vs. Frequency and
Voltage.
G
(
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and
Temperature measured in a 50
system.
N
(
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency
and Temperature.
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and
Temperature.
2.7 V
3.0 V
3.3 V
0
20
10
15
5
0
1.0
0.5
1.5
2.0
2.5
-40
°
C
+25
°
C
+85
°
C
4.5
7.5
5.5
6.5
5
0
1.0
0.5
1.5
2.0
2.5
7
6
2.7 V
3.0 V
3.3 V
-8
4
-4
0
-6
0
1.0
0.5
1.5
2.0
2.5
2
-2
2.7 V
3.0 V
3.3 V
P
1
(
FREQUENCY (GHz)
-8
4
-4
0
-6
0
1.0
0.5
1.5
2.0
2.5
2
-2
-40
°
C
+25
°
C
+85
°
C
V
FREQUENCY (GHz)
Figure 7. Input and Output VSWR vs.
Frequency.
0
4
2
3
1
0
1.0
0.5
1.5
2.0
2.5
VSWR in
VSWR out
I
d
V
d
(V)
Figure 8. Supply Current vs. Voltage
and Temperature.
0
25
10
15
5
0
2
1
3
4
5
20
4
8
6
7
5
0
1.0
0.5
1.5
2.0
2.5
-40
°
C
+25
°
C
+85
°
C
-40
°
C
+25
°
C
+85
°
C
Figure 9. Third Order Intercept
Point, IP
3
vs. Frequency and
Temperature.
I
3
(
FREQUENCY (GHz)
2
14
6
10
4
0
1.0
0.5
1.5
2.0
2.5
12
8
-40
°
C
+25
°
C
+85
°
C
相關(guān)PDF資料
PDF描述
INA-34063 3V Fixed Gain. Medium Power Amplifier
INA-34063-BLK IC-RF AMPLIFIER MED. PWR.
INA-32063 3.0 GHz Wideband Silicon RFIC Amplifier(3.0 GHz 寬頻帶硅射頻集成電路放大器)
INA-34063 3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射頻集成電路放大器)
INA-50311 1 GHz Low Noise Silicon MMIC Amplifier
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INA321E/250 功能描述:儀表放大器 Micropwr Single-sply CMOS RoHS:否 制造商:Texas Instruments 通道數(shù)量: 輸入補(bǔ)償電壓:150 V 可用增益調(diào)整: 最大輸入電阻:10 kOhms 共模抑制比（最小值）:88 dB 工作電源電壓:2.7 V to 36 V 電源電流:200 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:MSOP-8 封裝:Bulk
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