參數(shù)資料
型號: INA-12063
英文描述: 1.5 GHz Low Noise Self-Biased Transistor Amplifier
中文描述: 1.5 GHz的低噪聲自偏置晶體管放大器
文件頁數(shù): 3/24頁
文件大?。?/td> 351K
代理商: INA-12063
6-118
INA-12063 Typical Performance, 900 MHz LNA
(900 MHz Test Circuit, see Figure 32)
T
C
= 25
°
C, Z
O
= 50
, V
d
= 3 V, I
C
= 5 mA, unless noted
V
d
(V)
Figure 7. Supply Current vs. Voltage
and Temperature.
0
2
4
6
10
8
S
0.1
0.5 0.7 0.9 1.1
0.3
1.3
1.7
1.5
1.9
FREQUENCY (GHz)
Figure 1. Gain vs. Frequency.
-10
0
-5
10
5
15
20
G
1
2
3
4
5
V
d
(V)
Figure 4. Gain at 900 MHz vs. Voltage
and Temperature.
14.8
15.6
15.2
16.4
16.0
16.8
17.2
G
0.1
0.5 0.7 0.9 1.1
0.3
1.3
1.7
1.5
1.9
FREQUENCY (GHz)
Figure 2. Input Return Loss vs.
Frequency.
-20
-10
-15
-5
0
R
0.1
0.5 0.7 0.9 1.1
0.3
1.3
1.7
1.5
1.9
FREQUENCY (GHz)
Figure 3. Output Return Loss vs.
Frequency.
-20
-10
-15
-5
0
R
T
A
= +85
°
C
T
A
= +25
°
C
T
A
= –40
°
C
T
A
= +85
°
C
T
A
= +25
°
C
T
A
= –40
°
C
1
2
3
4
5
V
d
(V)
Figure 5. Noise Figure at 900 MHz vs.
Voltage and Temperature.
1.7
2.2
1.95
2.45
2.7
N
+85
°
C
+25
°
C
–40
°
C
1
2
3
4
5
V
d
(V)
Figure 6. Output P
1dB
at 900 MHz vs.
Voltage and Temperature.
-2
0
-1
2
1
3
4
P
1
T
A
= +85
°
C
T
A
= +25
°
C
T
A
= –40
°
C
1
0
2
3
4
5
DEVICE CURRENT (mA)
Figure 8. Output P
1 dB
at 900MHz vs.
Device Current for V
d
= 3 V.
-6
-3
0
3
9
6
P
1
4
2
6
8
10
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