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參數(shù)資料
| 型號(hào)： | INA-12063 |
| 英文描述： | 1.5 GHz Low Noise Self-Biased Transistor Amplifier |
| 中文描述： | 1.5 GHz的低噪聲自偏置晶體管放大器 |
| 文件頁數(shù)： | 17/24頁 |
| 文件大?。?/td> | 351K |
| 代理商： | INA-12063 |
6-132
9. Final CAD simulation and
optimization.
With reference to
Figure 21 the CAD circuit file
from step 4 is embellished to
include the effects of component
mounting pads, lengths of trans-
mission lines used to intercon-
nect components, ground vias,
bypass and blocking capacitors,
etc. (Since 900 MHz is a fairly
moderate frequency, extremely
fine detail is not required.)
Using the previous element
values for the matching circuits
as a starting point,
Touchstone
was used to optimize the circuit
for noise figure and output match,
which were the primary design
goals from Step 1. The input and
output matching elements were
used as variables for the optimi-
zation. Following the optimiza-
tion, the value of the stabilizing
resistor, R1, was also reviewed
and it was found that an increase
to 330
was sufficient to make
K>1 over the entire frequency
range of the S-parameters. The
Touchstone
circuit file for the
complete amplifier is shown in
Appendix A and the simulation
results in Appendix B.
The schematic for the complete
INA-12063 amplifier circuit is
shown in Figure 22.
A final simulation using optimized
component values predicted
performance of the amplifier at
900 MHz to be:
NF = 1.6 dB
Gain = 13.4 dB
MAG = 14.1 dB
Input RL = 8.4 dB
Output RL = 31 dB
Results of this step:
Optimization of circuit and
verification of performance goals.
10. Assemble and test.
A
circuit based on the PCB layout
was assembled using components
with standard values that were
closest to those resulting from
the circuit optimization.
The test results compared well
with the computer simulations
from the previous step. For this
particular circuit, it was deter-
mined experimentally that less
shunt capacitance was required at
the input than predicted by the
CAD analysis. As a result, the
shunt, open circuit stub near Pin 3
was shortened to tune the circuit
for minimum noise figure. The
final LNA is shown in Figure23.
Figure 23. Completed 900 MHz LNA.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| INA-12063-BLK | 1.5 GHz Low Noise Self-Biased Transistor Amplifier |
| INA-12063-TR1 | 1.5 GHz Low Noise Self-Biased Transistor Amplifier |
| INA-30311 | GT 14C 14#16 SKT PLUG |
| INA-30311-BLK | 1 GHz Low Noise Silicon MMIC Amplifier |
| INA-30311-TR1 | 1 GHz Low Noise Silicon MMIC Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| INA-12063-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1.5 GHz Low Noise Self-Biased Transistor Amplifier |
| INA-12063-TR1 | 制造商:Agilent Technologies 功能描述: |
| INA120AP | 制造商:TI 制造商全稱:Texas Instruments 功能描述:INSTRUMENTATION AMPLIFIER |
| INA120BG | 制造商:TI 制造商全稱:Texas Instruments 功能描述:INSTRUMENTATION AMPLIFIER |
| INA120BP | 制造商:TI 制造商全稱:Texas Instruments 功能描述:INSTRUMENTATION AMPLIFIER |
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