參數(shù)資料
型號(hào)： IMT4
廠商： Rohm CO.,LTD.
英文描述： General purpose (dual transistors)
中文描述： 通用（雙晶體管）
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 78K
代理商： IMT4
DS30303 Rev. 2 - 2
1 of 3
IMT4
www.diodes.com
Epitaxial Planar Die Construction
Complementary NPN Type Available
(IMX8)
Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
D
F
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
Mechanical Data
Case: SOT-26, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KX7, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.016 grams (approx.)
IMT4
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
IMT4
-120
-120
-5.0
-50
225
555
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
C/W
C
-55 to +150
T
C
U
D
O
R
P
W
E
N
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-120
-120
-5.0
V
V
V
A
A
I
C
= -50 A
I
C
= -1.0mA
I
E
= -50 A
V
CB
= -100V
V
EB
= -4.0V
-0.5
-0.5
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
180
820
-0.5
I
C
= -2.0mA, V
CE
= -6.0V
I
C
= -10mA, I
B
= -1.0mA
V
CE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
140
MHz
V
= -12V, I
E
= 2.0mA,
f = 100MHz
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
0
8°
All Dimensions in mm
B
2
B
1
E
1
C
2
E
2
C
1
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
2. Short duration pulse test used to minimize self-heating effect.
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