參數(shù)資料
型號： IMX8-7
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： GT 3C 3#16S PIN PLUG
中文描述： 50 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁數(shù)： 1/3頁
文件大?。?/td> 84K
代理商： IMX8-7
DS30304 Rev. 5 - 2
1 of 3
IMX8
www.diodes.com
Diodes Incorporated
IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available (IMT4)
Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
Value
120
120
5.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
C/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
D
F
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic. UL Flammability
Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking (See Page 2): KX8
Ordering & Date Code Information: See Page 2
Weight: 0.016 grams (approximate)
T
C
U
D
O
R
P
W
E
N
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
120
120
5.0
V
V
V
A
A
I
C
= 50 A
I
C
= 1.0mA
I
E
= 50 A
V
CB
= 100V
V
EB
= 4.0V
0.5
0.5
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
180
820
0.5
I
C
= 2.0mA, V
CE
= 6.0V
I
C
= 10mA, I
B
= 1.0mA
V
CE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
140
MHz
V
= 12V, I
C
= 2.0mA,
f = 100MHz
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
0
8°
All Dimensions in mm
B
2
B
1
E
1
C
2
E
2
C
1
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
2. Short duration test pulse used to minimize self-heating effect.
相關PDF資料
PDF描述
IMX8 GT 3C 3#16S PIN PLUG
IMX8 GT 3C 3#16S PIN PLUG
IPL1-105-01-S-S 5 CONTACT(S), MALE, POWER CONNECTOR, SOLDER
IPL1-102-01-S-S 2 CONTACT(S), MALE, POWER CONNECTOR, SOLDER
IPL1-110-01-S-S 10 CONTACT(S), MALE, POWER CONNECTOR, SOLDER
相關代理商/技術參數(shù)
參數(shù)描述
IMX8-7-F 功能描述:兩極晶體管 - BJT DUAL NPN 225mW SIGNAL DUAL NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
IMX8T108 功能描述:兩極晶體管 - BJT DUAL NPN 120V 50MA SOT-457 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
IMX9 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor (isolated dual transistors)
IMX9T110 功能描述:兩極晶體管 - BJT DUAL NPN 20V 500MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
IMXEBOOKDC2 功能描述:子卡和OEM板 E-BOOK Exp Dghtr Crd RoHS:否 制造商:BeagleBoard by CircuitCo 產(chǎn)品:BeagleBone LCD4 Boards 用于:BeagleBone - BB-Bone - Open Source Development Kit
發(fā)布緊急采購，3分鐘左右您將得到回復。