參數(shù)資料
型號(hào)： IMX8
廠商： Diodes Inc.
英文描述： GT 3C 3#16S PIN PLUG
中文描述： 雙npn型小信號(hào)晶體管表面貼裝
文件頁數(shù)： 1/2頁
文件大?。?/td> 43K
代理商： IMX8
DS30304 Rev. A-2
1 of 2
IMX8
IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(IMT4)
Small Surface Mount Package
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
IMX8
120
120
5.0
50
225
555
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
C/W
C
-55 to +150
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
F
D
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
KX8
Mechanical Data
Case: SOT-26, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KX8
Weight: 0.016 grams (approx.)
N
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
All Dimensions in mm
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
120
120
5.0
V
V
V
A
A
I
C
= 50 A
I
C
= 1.0mA
I
E
= 50 A
V
CB
= 100V
V
EB
= 4.0V
0.5
0.5
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
180
820
0.5
I
C
= 2.0mA, V
CE
= 6.0V
I
C
= 10mA, I
B
= 1.0mA
V
CE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
140
MHz
V
= 12V, I
E
= -2.0mA,
f = 100MHz
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
IMX8-7
Packaging
SOT-26
Shipping
3000/Tape & Reel
Ordering Information
(Note 3)
相關(guān)PDF資料
PDF描述
IMX8 GT 3C 3#16S PIN PLUG
IPL1-105-01-S-S 5 CONTACT(S), MALE, POWER CONNECTOR, SOLDER
IPL1-102-01-S-S 2 CONTACT(S), MALE, POWER CONNECTOR, SOLDER
IPL1-110-01-S-S 10 CONTACT(S), MALE, POWER CONNECTOR, SOLDER
IQBG-2000A+ 1800 MHz - 2000 MHz RF/MICROWAVE I/Q MODULATOR, 9 dB CONVERSION LOSS-MAX
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IMX8_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
IMX8_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
IMX8-7 功能描述:兩極晶體管 - BJT DUAL NPN 225mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
IMX8-7-F 功能描述:兩極晶體管 - BJT DUAL NPN 225mW SIGNAL DUAL NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
IMX8T108 功能描述:兩極晶體管 - BJT DUAL NPN 120V 50MA SOT-457 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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