參數(shù)資料
型號: IMC024FLSG
廠商: INTEL CORP
元件分類: DRAM
英文描述: 5 V Series 200 Flash Memory Card(5V系列200閃速存儲器插卡)
中文描述: 16M X 16 FLASH 5V PROM CARD, 200 ns, XMA
封裝: PC CARD
文件頁數(shù): 4/35頁
文件大?。?/td> 217K
代理商: IMC024FLSG
iMC008/016/024/032/048/064FLSG
E
4
PRELIMINARY
REVISION HISTORY
(Continued)
4/01/98
-002
In Paragraph 8.4, DC Characteristics, changed the minimum limit for V
IH
to 0.7
V
CC
(from 2.0)
In Paragraph 8.4, DC Characteristics, eliminated I
CCS
and I
CCD
entries for 40-
and 56-Mbyte cards
In note 1 of paragraph 8.5.2, Write Operations restated the
“CE# deasserted”
conditions to be both CE#s (CEL# and CEH#) instead of either one of the CEs
(CEL# or CEH#)
In paragraph 8.6,
Block Erase, Write, and Lock-Bit Configuration Performance
,
changed the “Typ” entries for first 3 parameters (pertaining to write time) to
increase write times by 16.67%; added note 6 to describe expected write time
performance relative to the specified maximum and typical values, and to
suggest use of RDY/BSY# to maximize system performance.
In Paragraph 10.0,
Ordering Information,
deleted density codes for 40- and 56-
Mbytes
Updated front cover sheet highlights: changed write speed to 6.3
μ
s
Updated front cover sheet highlights: changed write speed to 12
μ
s
In Table 8.5.1,
Read Operations
Common Memory
, changed IEEE symbol
t
GHQZ
to
t
EHQZ
In Paragraph 8.6
Block Erase, Write, and Lock-Bit Configuration Performance,
changed typical values for the following parameters: Write Buffer Word Write
Time, Word Write Time (Using Word Write Command), and Block Write Time
(Using Write to Buffer Command)
05/01/98
-003
05/15/98
-004
12/22/98
-005
8-,16-,24-, and 32-Mbyte cards use 28F320J5 components
Updated I
CCS
and I
CCD
Specifications
Updated Table 8.6,
Block Erase, Write and Lock-Bit Configuration Performance
Name of document changed from
Value
Series 200 Flash Memory Card 8
—64
Megabytes.
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