參數(shù)資料
型號(hào)： IMC024FLSG
廠商： INTEL CORP
元件分類： DRAM
英文描述： 5 V Series 200 Flash Memory Card(5V系列200閃速存儲(chǔ)器插卡)
中文描述： 16M X 16 FLASH 5V PROM CARD, 200 ns, XMA
封裝： PC CARD
文件頁(yè)數(shù)： 3/35頁(yè)
文件大?。?/td> 217K
代理商： IMC024FLSG
E
iMC008/016/024/032/048/064FLSG
3
PRELIMINARY
CONTENTS
PAGE
PAGE
1.0 SCOPE OF DOCUMENT ................................5
2.0 PRODUCT OVERVIEW ..................................5
3.0 CARD ARCHITECTURE.................................5
3.1 Card Signal Description...............................5
4.0 MEMORY CONTROL LOGIC .........................9
4.1 Bus Operations............................................9
4.2 Decode Logic............................................. 12
5.0 COMMAND DEFINITION.............................. 13
5.1 Basic Command Set.................................. 13
5.2 Scaleable Command Set........................... 19
6.0 CARD ATTRIBUTE INFORMATION............. 21
6.1 PC Card Information Structure................... 21
6.2 CIS Data.................................................... 21
7.0 SYSTEM DESIGN CONSIDERATIONS........24
7.1 Power Supply Decoupling..........................24
7.2 Power-Up/Down Protection........................24
7.3 RDY/BSY# and Write/Block Erase Status
Polling.......................................................24
8.0 ELECTRICAL SPECIFICATIONS.................25
8.1 Absolute Maximum Ratings .......................25
8.2 Operating Conditions.................................25
8.3 Capacitance...............................................25
8.4 DC Characteristics.....................................26
8.5 AC Characteristics.....................................28
8.6 Block Erase, Write, and Lock-Bit
Configuration Performance .......................33
9.0 PACKAGING.................................................34
10.0 ORDERING INFORMATION .......................35
11.0 ADDITIONAL INFORMATION.....................35
REVISION HISTORY
Date of
Revision
Version
Description
12/01/97
-001
Original version
4/01/98
-002
Updated front cover sheet highlights: eliminated 40- and 56-Mbyte density
offerings; changed write speed to 7
μ
s; changed number of erase cycles per
block to 100,000
In third paragraph of legal statement on page 2, eliminated iMC040FLSG and
iMC056FLSG references
In Paragraph 2.0, Product Overview, reworded the first sentence of the first
paragraph to eliminate the implied availability of all multiples of 8-Mbytes for
memory densities offered in the range from 8- to 64-Mbytes
In Table 3, Card Signal Values for the Card’s Bus Operations and Modes,
changed conditions for Word Read, Word Write and Standby operations
In first sentence of Paragraph 4.1.3, Standby re-defined standby mode entry
conditions
In Table 10, Value Series 200 Card Tuples,eliminated entries not related to
products actually offered: eliminated 40- and 56-Mbyte references and 150 ns
speed references
In Paragraph 7.2, Power-Up/Down Protection reworded the second sentence of
the third paragraph for the requirement that WE# must be low and CE
1
# or
CE
2
# must be low for a command write
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