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參數(shù)資料
| 型號： | IMC008FLSC |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 5 V Value Series 100 Flash Memory Card(5V 100系列閃速存儲器卡) |
| 中文描述： | 4M X 16 FLASH 5V PROM CARD, 100 ns, XMA68 |
| 封裝： | PC CARD-68 |
| 文件頁數(shù)： | 21/29頁 |
| 文件大?。?/td> | 211K |
| 代理商： | IMC008FLSC |
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E
8.4
iMC002/004/008/016FLSC
21
PRELIMINARY
DC Characteristics
Symbol
Parameter
Notes
Min
Max
±
20
Units
μ
A
Test Conditions
I
LI
Input Leakage Current
1,2
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
OUT
=V
CC
or GND
I
LO
Output Leakage Current
1
±
20
μ
A
V
IL
Input Low Voltage
1
0
0.8
V
V
IH
Input High Voltage
1
3.85
V
CC
+ 0.5
V
V
OL
Output Low Voltage
1
0.4
V
I
OL
= 3.2 mA
V
OH
Output High Voltage
1
V
CC
– 0.4
V
CC
V
I
OH
= –2.0 mA
V
LKO
V
CC
Erase/Program
Lock Voltage
1
2.0
V
NOTES:
1.
2.
Values are the same for byte and word wide modes for all card densities.
Exceptions: With V
= GND, the leakage current on CE
#, CE
#, OE#, and WE# will be < 500
μ
A due to internal pull-up
resistors. With V
IN
= V
CC
, RST leakage current will be < 150
μ
A due to internal pull-down resistors.
8.4
DC Characteristics
(Continued)
Sym
Parameter
Density
Notes
x16 Mode
Units
Test Conditions
(Mbytes)
Typ
Max
I
CCR
V
CC
Read Current
ALL
1, 3
75
mA
V
CC
= V
CC
Max
t
CYCLE
= 100 ns
I
CCW
V
CC
Program Current
ALL
1, 3
150
mA
I
CCE
V
CC
Erase Current
ALL
1, 3
100
mA
I
CCSL
V
CC
Sleep Current
2, 4
1, 2, 4
30
170
μ
A
V
CC
= V
CC
Max
8
1, 2, 4
30
200
μ
A
RESET, Control Signals =
V
IH
16
1, 2, 4
30
300
μ
A
I
CCS
V
CC
Standby Current
2, 4
1, 2, 4
80
370
μ
A
V
CC
= V
CC
Max
8
1, 2, 4
135
600
μ
A
Control Signals = V
CC
16
1, 2, 4
245
1,100
μ
A
CMOS Test Conditions: V
IL
= GND ± 0.2 V, V
IH
= V
CC
± 0.2 V
NOTES:
1.
All currents are RMS values unless otherwise specified. Typical conditions: V
CC
= 5 V, T = +25 °C.
2.
Control Signals: CE
1
#, CE
2
#, OE#, WE#.
3.
Characteristics assume only one pair of components are active and the remaining pairs are in standby.
4.
Inputs are either V
CC
± 0.2 V or GND ± 0.2 V.
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