參數(shù)資料
型號: IMC004FLSA
廠商: Intel Corp.
英文描述: SERIES 2 FLASH MEMORY CARDS iMC002FLSA, iMC004FLSA, iMC010FLSA, iMC020FLSA
中文描述: 系列2記憶卡iMC002FLSA,iMC004FLSA,iMC010FLSA,iMC020FLSA
文件頁數(shù): 34/39頁
文件大?。?/td> 548K
代理商: IMC004FLSA
SERIES 2 FLASH MEMORY CARDS
COMMON AND ATTRIBUTE MEMORY, AC CHARACTERISTICS: CE
Y
-Controlled Write Operations
(1)
Symbol
Parameter
Notes
Min
Max
Unit
JEDEC
PCMCIA
t
AVAV
t
WC
Write Cycle Time
1
150
ns
t
ELEH
t
w
(WE)
Chip Enable Pulse Width
1
80
ns
t
AVEL
t
su
(A)
Address Setup Time
1
20
ns
t
AVEH
t
su
(A-WEH)
Address Setup Time for CE
Y
1
100
ns
t
VPEH
t
vps
V
PP
Setup to CE
Y
Going High
Write Enable Setup Time for CE
Y
1
100
ns
t
WLEH
t
su
(CE-WEH)
1
100
ns
t
DVEH
t
su
(D-WEH)
Data Setup Time for CE
Y
1
50
ns
t
EHDX
t
h
(D)
Data Hold Time
1
20
ns
t
EHAX
t
rec
(WE)
Write Recover Time
1
20
ns
t
EHRL
CE
Y
High to RDY/BSY
Y
1
120
ns
t
EHQV1
Duration of
Data Write
Duration of Data Write Operation
1
6
m
s
t
EHQV2
Duration of
Erase
Duration of Block Erase Operation
1
0.3
sec
t
QVVL
V
PP
Hold from Operation Complete
1, 2
0
ns
t
EHGL
t
h
(OE-WE)
Write Recovery before Read
1
10
ns
t
RHEL
Reset-PwrDwn Recovery to CE
Y
Going Low
1
m
s
NOTES:
1. Read timing characteristics during erase and data write operations are the same as during read-only operations. Refer to
AC Characteristics for Read-Only operations.
2. Refer to text on Data-Write and Block-Erase Operations.
34
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