參數(shù)資料
型號: IMBD4448-V-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SWITING 100V 0.15A 3PIN SOT-23 - Tape and Reel
中文描述: Diodes (General Purpose, Power, Switching) 750V Io/150mA 500mA IFSM
文件頁數(shù): 1/5頁
文件大小: 89K
代理商: IMBD4448-V-GS18
IMBD4448
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 15-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85732
Small Signal Switching Diode
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode in case SOT-23, especially
suited for automatic insertion.
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Device on fiberglass substrate, see layout on next page.
1
2
3
PARTS TABLE
PART
ORDERING CODE
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
IMBD4448
IMBD4448-E3-08 or IMBD4448-E3-18
Single diode
A3
Tape and reel
IMBD4448-HE3-08 or IMBD4448-HE3-18
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
V
R
75
V
Peak reverse voltage
V
RM
100
V
Rectified current (average) half wave
rectification with resistive load
(1)
f
50 Hz
I
F(AV)
150
mA
Surge forward current
t < 1 s and T
J
= 25 °C
I
FSM
500
mA
Power dissipation
(1)
P
tot
350
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
R
thJA
450
K/W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
- 65 to + 150
°C
Operating temperature range
T
op
- 55 to + 150
°C
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