參數(shù)資料
型號(hào)： IKW40T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
中文描述： 低損耗DUOPACK：在戰(zhàn)壕和場(chǎng)終止技術(shù)IGBT的軟，恢復(fù)快，抗何PARAALEL快恢復(fù)二極管
文件頁(yè)數(shù)： 4/15頁(yè)
文件大?。?/td> 449K
代理商： IKW40T120
IKW40T120
^
TrenchStop Series
Power Semiconductors
4
Preliminary / Rev. 1 Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
52
40
580
120
5.0
5.4
10.4
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=600V,
I
C
=40A,
V
GE
=0/15V,
R
G
= 15
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
410
8.8
36
330
-
-
-
ns
μC
A
A/
μ
s
T
j
=150
°
C
V
R
=600V,
I
F
=40A,
di
F
/dt
=800A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關(guān)PDF資料
PDF描述
IKW50N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IL-G-xxP-S3x2 2.5mm Contact Spacing PCB-to-Cable Connectors
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW40T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 75A 270W TO247-3
IKW40T120XK 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube
IKW40TI20FKSA1 制造商:Infineon Technologies AG 功能描述:
IKW50N60H3 功能描述:IGBT 晶體管 HIGH SPEED SWITCHING RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW50N60H3FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 50A 333W TO247-3
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