參數(shù)資料
型號: IHW30N120R
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT with monolithic body diode for soft switching Applications
中文描述: 與單片體二極管軟開關(guān)IGBT的應(yīng)用
文件頁數(shù): 9/12頁
文件大?。?/td> 987K
代理商: IHW30N120R
IHW30N120R
Soft Switching Series
q
Power Semiconductors
9
Rev. 2.2 May 06
I
F
,
F
0V
1V
0A
10A
20A
175°C
T
J
=25°C
V
F
,
F
-50°C
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
10A
I
F
=20A
7.5A
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 22. Typical diode forward voltage
as a function of junction temperature
Figure 21. Typical diode forward current as
a function of forward voltage
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N120R2 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R2_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
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IHW30N120R3 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube