參數(shù)資料
型號(hào)： IHW30N120R
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT with monolithic body diode for soft switching Applications
中文描述： 與單片體二極管軟開關(guān)IGBT的應(yīng)用
文件頁數(shù)： 3/12頁
文件大小： 987K
代理商： IHW30N120R
IHW30N120R
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Soft Switching Series
q
Power Semiconductors
3
Rev. 2.2 May 06
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
71
37
1007
45
-
2.9
2.9
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=600V,
I
C
=30A
V
GE
=0 /15V,
R
G
=34
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
2)
=39pF
mJ
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
67
54
1157
59
-
4.3
4.3
-
-
-
-
-
-
-
ns
T
j
=175
°
C
V
CC
=600V,
I
C
=30A,
V
GE
= 0/15V,
R
G
= 34
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery
2
2)
=180nH,
2)
=39pF
mJ
1
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
2
Diode used in this test is Diode of IDP30E120
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N120R2 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R2_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N120R2FKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R3 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N120R3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube
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