參數(shù)資料
型號: IHW30N100R
廠商: INFINEON TECHNOLOGIES AG
英文描述: Reverse Conducting IGBT with monolithic body diode
中文描述: 反向開展與IGBT的單片體二極管
文件頁數(shù): 6/12頁
文件大?。?/td> 370K
代理商: IHW30N100R
Soft Switching Series
IHW30N100R
q
Power Semiconductors
6
Rev. 2 July 06
t
S
0A
10A
20A
30A
40A
50A
100ns
1000ns
t
f
t
d(off)
t
S
20
30
40
10ns
100ns
1000ns
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
= 600V, V
GE
= 0/15V,
R
G
=26
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 600V, V
GE
= 0/15V,
I
C
= 30A,
Dynamic test circuit in Figure E)
t
S
25°C
50°C
75°C
100°C
125°C
150°C
100ns
1000ns
t
f
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
2V
3V
4V
5V
6V
max.
typ.
min.
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 600V,
V
GE
= 0/15V,
I
C
= 30A,
R
G
=26
,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.7mA)
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