參數(shù)資料
型號(hào): IHW30N100R
廠商: INFINEON TECHNOLOGIES AG
英文描述: Reverse Conducting IGBT with monolithic body diode
中文描述: 反向開(kāi)展與IGBT的單片體二極管
文件頁(yè)數(shù): 2/12頁(yè)
文件大小: 370K
代理商: IHW30N100R
Soft Switching Series
IHW30N100R
q
Power Semiconductors
2
Rev. 2 July 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
0.36
R
thJCD
0.36
R
thJA
40
K/W
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=30A
T
j
=25
°
C
T
j
=150
°
C
T
j
=175
°
C
V
GE
=0V,
I
F
=30A
T
j
=25
°
C
T
j
=150
°
C
T
j
=175
°
C
I
C
=700
μ
A,
V
CE
=
V
GE
V
CE
=1000V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
1000
-
-
Collector-emitter saturation voltage
-
-
-
1.5
1.7
1.75
1.7
-
-
Diode forward voltage
V
F
-
-
-
1.5
1.65
1.7
1.7
-
-
Gate-emitter threshold voltage
V
GE(th)
I
CES
5.1
5.8
6.4
V
Zero gate voltage collector current
-
-
-
-
-
-
-
5
2500
600
-
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=30A
nA
S
56
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
2791
82
78
209
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=800V,
I
C
=30A
V
GE
=15V
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
13
-
nH
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