- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383103 > IHW15T120 (INFINEON TECHNOLOGIES AG) IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode PDF資料下載
參數(shù)資料
| 型號： | IHW15T120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管 |
| 文件頁數(shù)： | 14/14頁 |
| 文件大小： | 339K |
| 代理商： | IHW15T120 |
^
Published by
Infineon Technologies AG
,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
IHW15T120
Soft Switching Series
Power Semiconductors
14
Rev. 2 Mar-04
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IHW20N120R2 | Reverse Conducting IGBT with monolithic body diode |
| IHW20N120R | Reverse Conducting IGBT with monolithic body diode |
| IHW20T120 | Soft Switching Series |
| IHW30N100R | Reverse Conducting IGBT with monolithic body diode |
| IHW30N120R | IGBT with monolithic body diode for soft switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IHW15T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 113W TO247-3 |
| IHW20N120R | 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R2 | 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R3 | 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 40A 310W TO247-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。