參數(shù)資料
型號(hào)： IFM016G
廠商： INTEL CORP
元件分類： DRAM
英文描述： 5 V Series 200 Flash Memory Miniature Card(5V 200系列閃速存儲(chǔ)器微型卡)
中文描述： 1M X 16 FLASH 5V PROM CARD, 150 ns, XMA60
文件頁數(shù)： 27/35頁
文件大?。?/td> 262K
代理商： IFM016G
E
7.4
iFM004G/iFM008G/iFM016G
27
PRELIMINARY
DC Characteristics
Test
Sym
Parameter
Notes
Typ
Max
Unit
Conditions
I
LI
Input Load Current
1,4
20
μ
A
V
CC
= V
CC
Max, V
IN
= V
CC
or GND
I
LO
Output Leakage Current
1
20
μ
A
V
CC
= V
CC
Max, V
IN
= V
CC
or GND
I
CCS
V
CC
Standby Current
4-Mbyte Card
8-Mbyte Card
16-Mbyte Card
V
CC
Deep Power-Down
Current
4-Mbyte Card
8-Mbyte Card
16-Mbyte Card
μ
A
V
CC
= V
CC
Max
CEL# = CEH# = RESET# =V
CC
± 0.2 V
1,3
1,3
1,3
100
180
340
170
320
620
I
CCD
μ
A
RESET#, GND ± 0.2V
I
OUT
(RESET) = 0 mA
1,3
100
145
1,3
180
270
1,3
340
520
I
CCR
V
CC
Read Current
1
35
55
mA
V
CC
= V
CC
Max, CEL#/CEH# = GND,
f = 5 MHz, I
OUT
= 0 mA
I
CCW
V
CC
Word Write or Set
Lock-Bit Current
1,3
35
60
mA
CMOS Inputs
I
CCE
V
CC
Block Erase or
Clear Lock-Bits Current
I
CCES
V
CC
Block Erase
Suspend Current
1,3
35
70
mA
CMOS Inputs
1,2
10
mA
CEL# = CEH# = V
IH
NOTES:
1.
All currents are in RMS unless otherwise noted. These currents are valid for all product versions (speeds). Contact Intel’s
Application Support Hotline or your local sales office for information about typical specifications.
I
CCES
is specified with the card’s memory de-selected. If read or word write occurs while in erase suspend mode, the card’s
current draw is the sum of I
CCES
and either I
CCR
(read) or I
CCW
(write).
CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V.
Exceptions: With V
IN
= GND, the leakage current on CEL#, CEH# will be < 50
μ
A each due to internal pull-up resistors.
2.
3.
4.
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