參數(shù)資料
型號： IDT75T43100S50BS
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： 微控制器/微處理器
英文描述： SPECIALTY MICROPROCESSOR CIRCUIT, PBGA304
封裝： 31 X 31 MM, LOW PROFILE, THERMALLY ENHANCED, SBGA-304
文件頁數(shù)： 45/46頁
文件大?。?/td> 446K
代理商： IDT75T43100S50BS
8
IDT75T43100
Preliminary Information
IP Co-Processor 32K Entries
Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions with VDDQ at 2.5V
NOTES:
1. VIL (min.) = –1.0V for pulse width less than tCYC/2, once per cycle.
2. VIH (max.) = VDDQ+1.0V for pulse width less than tCYC/2, once per cycle.
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed VDDQ during power
supply ramp up.
NOTE:
1. This parameter is guaranteed by device characterization, but not production
tested.
304 BGA Capacitance
(TA = +25°C, f = 1.0MHz)
Recommended DC Operating
Conditions with VDDQ at 3.3V
DC Operating Characteristic
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
2.375
2.5
2.625
V
VMATCH Match Supply Voltage
1.425
1.5
1.575
V
VDDQ
I/O Supply Voltage
2.375
2.5
2.625
V
VSS
Ground
0
V
VIH
Input High Voltage - Inputs
1.7
____
VDDQ +0.3(2)
V
VIH
Input High Voltage - I/O
1.7
____
VDDQ +0.3(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.7
V
C5325 tbl 01
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
2.375
2.5
2.625
V
VMATCH Match Supply Voltage
1.425
1.5
1.575
V
VDDQ
I/O Supply Voltage
3.135
3.3
3.465
V
VSS
Ground
0
V
VIH
Input High Voltage - Inputs
2.0
____
VDDQ + 0.3(2)
V
VIH
Input High Voltage - I/O
2.0
____
VDDQ + 0.3(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
C5325 tbl 02
Symbol
Parameter
Commercial
Unit
VTERM
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to 3.575
V
VTERM(2)
(VDDQ)
VDDQ Terminal Voltage
with Respect to GND
-0.5 to VDDQ +0.5
V
VTERM(2)
(INPUTS)
Input Terminal Voltage
with Respect to GND
-0.5 to VDDQ +0.5
V
VTERM(2)
(I/O)
I/O Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TBIAS
Temperature Under Bias
-55 to +125
oC
TSTG
Storage Temperature
-55 to +125
oC
PT
Power Dissipation
TBD
W
IOUT
DC Output Current
50
mA
C5325 tbl 03
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
7
pF
CI/O
I/O Capacitance
VOUT = 0V
7
pF
C5325 tbl05
NOTES:
1. VIL (min.) = –1.0V for pulse width less than tCYC/2, once per cycle.
2. VIH (max.) = VDDQ+1.0V for pulse width less than tCYC/2, once per
cycle.
S ym bol
Param eter
Commercial
Unit
Te m p e rature
tc
Cas e Te m p e rature
0° C to 90
°C
tA
A m b ie nt Te m p e rature
0° C to 70
°C
V SS
Gro und
0
V
V DD
Co re S upply Vo ltag e
2.5V ± 5%
V
V DDQ
I/O S up p ly Vo ltag e
2.5 ± 5%
V
3.3V ± 5%
V MATCH
M atc h S up p ly Vo ltag e
1.5V ± 75m V
V
C5325 tbl 04
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