參數(shù)資料
型號: IDT7134LA25FI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM
中文描述: 4K X 8 DUAL-PORT SRAM, 25 ns, CQFP48
封裝: CERAMIC, FP-48
文件頁數(shù): 3/11頁
文件大?。?/td> 160K
代理商: IDT7134LA25FI
3
IDT7134SA/LA
High-Speed 4K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges
Capacitance
(1)
(T
A
= +25°C, f = 1.0MHz)
Absolute Maximum Ratings
(1)
Recommended Operating
Temperature and Supply Voltage
(1,2)
Recommended DC Operating
Conditions
Symbol
Parameter
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
CC
= 5V ± 10%)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25%of the cycle time or 10 ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc +10%.
3. V
TERM
= 5.5V.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V and from 3V to 0V.
NOTES:
1. This is the parameter T
A
.
2. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
NOTES:
1. V
IL
(min.) > -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
NOTES:
1. At Vcc < 2.0V input leakages are undefined.
Symbol
Rating
Commercial
& Industrial
Military
Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
T
BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
T
STG
Storage
Temperature
-55 to +125
-65 to +150
o
C
P
T
(3)
Power
Dissipation
1.5
1.5
W
I
OUT
DC Output
Current
50
50
mA
2720 tbl 01
Grade
Ambient
Temperature
GND
Vcc
Military
-55
O
C to +125
O
C
0V
5.0V
+
10%
Commercial
0
O
C to +70
O
C
0V
5.0V
+
10%
Industrial
-40
O
C to +85
O
C
0V
5.0V
+
10%
2720 tbl 03
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
(2)
V
V
IL
Input Low Voltage
-0.5
(1)
____
0.8
V
2720 tbl 04
Symbol
Parameter
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
11
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
11
pF
2720 tbl 02
Symbol
Parameter
Test Conditions
7134SA
7134LA
Unit
Min.
Max.
Min.
Max.
|I
LI
|
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
___
10
___
5
μA
|I
LO
|
Output Leakage Current
CE
- V
IH
, V
OUT
= 0V to V
CC
___
10
___
5
μA
V
OL
Output Low Voltage
I
OL
= 6mA
___
0.4
___
0.4
V
I
OL
= 8mA
___
0.5
___
0.5
V
V
OH
Output High Voltage
I
OH
= -4mA
2.4
___
2.4
___
V
2720 tbl 05
相關(guān)PDF資料
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IDT7134SA70FI HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM
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