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參數(shù)資料
| 型號： | IDT71256L35PI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 35 ns, PDIP28 |
| 封裝： | 0.600 INCH, PLASTIC, DIP-28 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 108K |
| 代理商： | IDT71256L35PI |
8
IDT71256S/L
CMOS Static RAM 256K (32K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
NO
T RECOMMENDED
FOR
NEW
DESIGNS
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4,6)
NOTES:
1. A write occurs during the overlap of a LOW
CS and a LOW WE.
2. tWR is measured from the earlier of
CS or WE going HIGH to the end of the write cycle.
3. During this period, I/O pins are in the output state so that the input signals must not be applied.
4. If the
CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
6. If
OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ +tDW) to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If
OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse width can be as short
as the specified tWP. For a CS controlled write cycle,
OE may be LOW with no degradation to tCW.
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,4)
CS
2946 drw 10
tAW
tWR
tDW
DATAIN
ADDRESS
t WC
WE
t WP
tDH
DATAOUT
tWZ
t
t AS
(5)
(3)
OE
(3)
(6)
OW
tOHZ
(5)
t WR
CS
2946 drw 11
tAW
tDW
DATAIN
ADDRESS
tWC
WE
tCW
tDH2
AS
t
(6)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71256L35TDB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 35NS 28CDIP |
| IDT71256L35Y | 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71256L35Y/2996 | 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71256L35Y8 | 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71256L35YG | 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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