參數(shù)資料
型號： IDT70V7519S166DRI
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述： 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
封裝： PLASTIC, QFP-208
文件頁數(shù)： 20/22頁
文件大?。?/td> 490K
代理商： IDT70V7519S166DRI
6.42
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
7
Recommended Operating
Temperature and Supply Voltage(1)
Recommended DC Operating
Conditions with VDDQ at 2.5V
Absolute Maximum Ratings(1)
NOTES:
1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.
2. VTERM must not exceed VDDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied
as indicated above.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
3.3V
+ 150mV
Industrial
-40OC to +85OC0V
3.3V
+ 150mV
5618 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage
(3)
2.4
2.5
2.6
V
VSS
Ground
0
V
VIH
Input High Voltage
(Address & Control Inputs)
1.7
____
VDDQ + 100mV
(2)
V
VIH
Input High Voltage - I/O
(3)
1.7
____
VDDQ + 100mV
(2)
V
VIL
Input Low Voltage
-0.3
(1)
____
0.7
V
5618 tbl 05a
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-65 to +150
oC
IOUT
DC Output Current
50
mA
5618 tbl 06
Recommended DC Operating
Conditions with VDDQ at 3.3V
NOTES:
1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.
2. VTERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be
supplied as indicated above.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
3.15
3.3
3.45
V
VSS
Ground
0
V
VIH
Input High Voltage
(Address & Control Inputs)(3)
2.0
____
VDDQ + 150mV(2)
V
VIH
Input High Voltage - I/O(3)
2.0
____
VDDQ + 150mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
5618 tbl 05b
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