參數(shù)資料
型號(hào)： IDT70V7519S166BFI
廠商： Integrated Device Technology, Inc.
英文描述： HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述： 高速與3.3V 3.3V的256K × 36 SYNCHRONOU開(kāi)戶銀行可切換雙端口靜態(tài)RAM或2.5V的接口
文件頁(yè)數(shù)： 6/22頁(yè)
文件大?。?/td> 490K
代理商： IDT70V7519S166BFI
6.42
14
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
CLK"A"
R/
W"A"
BANK ADDRESS
AND ADDRESS"A"
DATAIN"A"
CLK"B"
R/
W"B"
BANK ADDRESS
AND ADDRESS"B"
DATAOUT"B"
tSW
tHW
tSA
tHA
tSD
tHD
tSW
tHW
tSA
tHA
tCD2
Dn
An
Dn
5618 drw 10
tDC
tCO(3)
Timing Waveform of Port A Write to Pipelined Port B Read(1,2,4)
NOTES:
1.
CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2.
OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to.
3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO
≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle
(ie, time from write to valid read on opposite port will be tCO + tCYC2 + tCD2).
4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
Timing Waveform with Port-to-Port Flow-Through Read(1,2,4)
DATAIN "A"
CLK "B"
R/
W "B"
BANK ADDRESS
AND ADDRESS "A"
R/
W "A"
CLK "A"
BANK ADDRESS
AND ADDRESS "B"
An
Dn
tDC
DATAOUT "B"
5618 drw 11
Dn
tSW tHW
tSA
tHA
tSD
tHD
tHW
tCD1
tCO(3)
tDC
tSA
tSW
tHA
NOTES:
1.
CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2.
OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.
3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO
≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle
(i.e., time from write to valid read on opposite port will be tCO + tCD1).
4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
相關(guān)PDF資料
PDF描述
IDT70V7519S166DR HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7519S166DRI HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7519S200DR HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7519S200DRI HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V9199L7PF HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V7519S166DR 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S166DRI 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S200BC 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S200BC8 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7519S200BCG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA
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