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參數(shù)資料
| 型號： | IDT70V7519S166BFI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速與3.3V 3.3V的256K × 36 SYNCHRONOU開戶銀行可切換雙端口靜態(tài)RAM或2.5V的接口 |
| 文件頁數(shù)： | 18/22頁 |
| 文件大小： | 490K |
| 代理商： | IDT70V7519S166BFI |
6.42
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
5
Pin Names
Left Port
Right Port
Names
CE0L, CE1L
CE0R, CE1R
Chip Enables
R/
WL
R/
WR
Read/Write Enable
OEL
OER
Output Enable
BA0L - BA5L
BA0R - BA5R
Bank Address(4)
A0L - A11L
A0R - A11R
Address
I/O0L - I/O35L
I/O0R - I/O35R
Data Input/Output
CLKL
CLKR
Clock
PL/
FTL
PL/
FTR
Pipeline/Flow-Through
ADSL
ADSR
Address Strobe Enable
CNTENL
CNTENR
Counter Enable
REPEATL
REPEATR
Counter Repeat(3)
BE0L - BE3L
BE0R - BE3R
Byte Enables (9-bit bytes)
VDDQL
VDDQR
Power (I/O Bus) (3.3V or 2.5V)(1)
OPTL
OPTR
Option for selecting VDDQX(1,2)
VDD
Power (3.3V)(1)
VSS
Ground (0V)
TDI
Test Data Input
TDO
Test Data Output
TCK
Test Logic Clock (10MHz)
TMS
Test Mode Select
TRST
Reset (Initialize TAP Controller)
5618 tbl 01
NOTES:
1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
2. OPTX selects the operating voltage levels for the I/Os and controls on that port.
If OPTX is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V
levels and VDDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that
port's I/Os and address controls will operate at 2.5V levels and VDDQX must be
supplied at 2.5V. The OPT pins are independent of one another—both ports can
operate at 3.3V levels, both can operate at 2.5V levels, or either can operate
at 3.3V with the other at 2.5V.
3. When
REPEATX is asserted, the counter will reset to the last valid address loaded
via
ADSX.
4. Accesses by the ports into specific banks are controlled by the bank address
pins under the user's direct control: each port can access any bank of memory
with the shared array that is not currently being accessed by the opposite port
(i.e., BA0L - BA5L
≠ BA0R - BA5R). In the event that both ports try to access the
same bank at the same time, neither access will be valid, and data at the two
specific addresses targeted by the ports within that bank may be corrupted (in
the case that either or both ports are writing) or may result in invalid output (in
the case that both ports are trying to read).
相關(guān)PDF資料 |
PDF描述 |
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| IDT70V7519S166DR | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7519S166DRI | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7519S200DR | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7519S200DRI | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V9199L7PF | HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IDT70V7519S166DR | 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S166DRI | 功能描述:IC SRAM 9MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BC | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BC8 | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7519S200BCG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA |
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