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參數(shù)資料
| 型號： | IDT70V7319S166BCI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:1.5" focal point |
| 中文描述： | 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 |
| 封裝： | BGA-256 |
| 文件頁數(shù)： | 5/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | IDT70V7319S166BCI |
6.42
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Pin Names
Left Port
Right Port
Names
CE
0L
,
CE
1L
CE
0R
,
CE
1R
Chip Enables
R/
W
L
R/
W
R
Read/Write Enable
OE
L
OE
R
Output Enable
BA
0L
- BA
5L
BA
0R
- BA
5R
Bank Address
(4)
A
0L
- A
11L
A
0R
- A
11R
Address
I/O
0L
- I/O
17L
I/O
0R
- I/O
17R
Data Input/Output
CLK
L
CLK
R
Clock
PL/
FT
L
PL/
FT
R
Pipeline/Flow-Through
ADS
L
ADS
R
Address Strobe Enable
CNTEN
L
CNTEN
R
Counter Enable
REPEAT
L
REPEAT
R
Counter Repeat
(3)
LB
L
,
UB
L
LB
R
,
UB
R
Byte Enables (9-bit bytes)
V
DDQL
V
DDQR
Power (I/O Bus) (3.3V or 2.5V)
(1)
OPT
L
OPT
R
Option for selecting V
DDQX
(1,2)
V
DD
Power (3.3V)
(1)
V
SS
Ground (0V)
TDI
Test Data Input
TDO
Test Data Output
TCK
Test Logic Clock (10MHz)
TMS
Test Mode Select
TRST
Reset (Initialize TAP Controller)
5629 tbl 01
NOTES:
1. V
DD
, OPT
X
, and V
DDQX
must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
2. OPT
X
selects the operating voltage levels for the I/Os and controls on that port.
If OPT
X
is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V
levels and V
DDQX
must be supplied at 3.3V. If OPT
X
is set to VIL (0V), then that
port's I/Os and address controls will operate at 2.5V levels and V
DDQX
must be
supplied at 2.5V. The OPT pins are independent of one another—both ports can
operate at 3.3V levels, both can operate at 2.5V levels, or either can operate
at 3.3V with the other at 2.5V.
3. When
REPEAT
X
is asserted, the counter will reset to the last valid address loaded
via
ADS
X
.
4. Accesses by the ports into specific banks are controlled by the bank address
pins under the user's direct control: each port can access any bank of memory
with the shared array that is not currently being accessed by the opposite port
(i.e., BA
0L
- BA
5L
≠
BA
0R
- BA
5R
). In the event that both ports try to access the
same bank at the same time, neither access will be valid, and data at the two
specific addresses targeted by the ports within that bank may be corrupted (in
the case that either or both ports are writing) or may result in invalid output (in
the case that both ports are trying to read).
相關PDF資料 |
PDF描述 |
|---|---|
| IDT70V7319S166BF | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:12" using 90% reflectance white card |
| IDT70V7319S166BFI | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:24"; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:24" |
| IDT70V7319S166DD | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:10ms; Turn On Time:10ms; Range:6-ft using 90% reflectance white card |
| IDT70V7319S166DDI | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:45m; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms |
| IDT70V7319S200BC | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:10ms; Turn On Time:10ms; Range:700-ft with SBRX1 Receiver |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V7319S166BCI8 | 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S166BF | 功能描述:IC SRAM 4MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S166BF8 | 功能描述:IC SRAM 4MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S166DD | 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70V7319S166DDI | 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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