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參數(shù)資料
| 型號： | IDT70V7319S166BCI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:1.5" focal point |
| 中文描述： | 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 |
| 封裝： | BGA-256 |
| 文件頁數(shù)： | 21/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | IDT70V7319S166BCI |
6.42
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Identification Register Definitions
Instruction Field
Value
Description
Revision Number (31:28)
0x0
Reserved for version number
IDT Device ID (27:12)
0x309
Defines IDT part number
IDT JEDEC ID (11:1)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
Indicates the presence of an ID register
5629 tbl 13
Scan Register Sizes
Register Name
Bit Size
Instruction (IR)
4
Bypass (BYR)
1
Identification (IDR)
32
Boundary Scan (BSR)
Note (3)
5629 tbl 14
System Interface Parameters
Instruction
Code
Description
EXTEST
0000
Forces contents of the boundary scan cells onto the device outputs
(1)
.
Places the boundary scan register (BSR) between TDI and TDO.
BYPASS
1111
Places the bypass register (BYR) between TDI and TDO.
IDCODE
0010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
HIGHZ
0100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers to a High-Z state.
CLAMP
0011
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the bypass register (BYR) between TDI and TDO.
SAMPLE/PRELOAD
0001
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data fromdevice inputs
(2)
and outputs
(1)
to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
RESERVED
All other codes
Several combinations are reserved. Do not use codes other than those
identified above.
5629 tbl 15
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com, or by contacting your local
IDT sales representative.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70V7319S166BF | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:12" using 90% reflectance white card |
| IDT70V7319S166BFI | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:24"; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:24" |
| IDT70V7319S166DD | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:10ms; Turn On Time:10ms; Range:6-ft using 90% reflectance white card |
| IDT70V7319S166DDI | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:45m; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms |
| IDT70V7319S200BC | Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:10ms; Turn On Time:10ms; Range:700-ft with SBRX1 Receiver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V7319S166BCI8 | 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S166BF | 功能描述:IC SRAM 4MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S166BF8 | 功能描述:IC SRAM 4MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S166DD | 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70V7319S166DDI | 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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