參數(shù)資料
型號: IDT70V639S12BFI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
中文描述: 128K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
封裝: 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208
文件頁數(shù): 5/23頁
文件大小: 187K
代理商: IDT70V639S12BFI
IDT70V639S
High-Speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Preliminary
5
NOTES:
1. V
DD
, OPT
X
, and V
DDQX
must be set to appropriate operating levels prior to
applying inputs on I/O
X
.
2. OPT
X
selects the operating voltage levels for the I/Os and controls on that port.
If OPT
X
is set to V
IH
(3.3V), then that port's I/Os and controls will operate at 3.3V
levels and V
DDQX
must be supplied at 3.3V. If OPT
X
is set to V
IL
(0V), then that
port's I/Os and controls will operate at 2.5V levels and V
DDQX
must be supplied
at 2.5V. The OPT pins are independent of one another—both ports can operate
at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V
with the other at 2.5V.
Left Port
Right Port
Names
CE
0L
,
CE
1L
CE
0R
,
CE
1R
Chip Enables
R/
W
L
R/
W
R
Read/Write Enable
OE
L
OE
R
Output Enable
A
0L
- A
16L
A
0R
- A
16R
Address
I/O
0L
- I/O
17L
I/O
0R
- I/O
17R
Data Input/Output
SEM
L
SEM
R
Semaphore Enable
INT
L
INT
R
Interrupt Flag
BUSY
L
BUSY
R
Busy Flag
UB
L
UB
R
Upper Byte Select
LB
L
LB
R
Lower Byte Select
V
DDQL
V
DDQR
Power (I/O Bus) (3.3V or 2.5V)
(1)
OPT
L
OPT
R
Option for selecting V
DDQX
(1,2)
M/
S
Master or Slave Select
V
DD
Power (3.3V)
(1)
V
SS
Ground (0V)
TDI
Test Data Input
TDO
Test Data Output
TCK
Test Logic Clock (10MHz)
TMS
Test Mode Select
TRST
Reset (Initialize TAP Controller)
5621 tbl 01
相關(guān)PDF資料
PDF描述
IDT70V639S12PRF HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S12PRFI HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S15BC HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S15BCI HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V639S15BF HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V639S12BFI8 功能描述:IC SRAM 2.25MBIT 12NS 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V639S12PRF 功能描述:IC SRAM 2.25MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V639S12PRF8 功能描述:IC SRAM 2.25MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V639S12PRFI 功能描述:IC SRAM 2.25MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V639S12PRFI8 功能描述:IC SRAM 2.25MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)